TFT LCD Display, TFT Panel

Sell SKR240/16, #Semikron #SKR240/16 New Stock, Semikron SKN240/16 New Semikron IGBT Module 500A 400V,, #IGBT_Module, #IGBT, #SKR240_16

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Features
. Reverse voltages up to 1800 V
. Hermetic metal case with glass insulator
. Cooling via heatsinks
. Threaded stud ISO M16 x 1,5, M20 x 1,52) or ¾ – 16 UNF 2A2)
. SKN: anode to stud
. SKR: cathode to stud
Typical Applications *
. All purpose high power rectifier diodes
. Non-controllable and halfcontrollable rectifiers
. Free-wheeling diodes
. Recommended snubber
network:
RC: 0,5 µF, 30 Ω (PR = 2W),
Rp: 50 kΩ (PR = 20 W)
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :240A
Collector current Icp 1ms Tc=80°C :500A
Collector power dissipation Pc:200W
Isolation Voltage VIsol (AC 1 minute) :3400V
Operating junction temperature Tj:+180°C
Storage temperature Tstg :-55 to +180°C
Mounting screw torque 30 N·m

Sell FM600TU-07A, #Mitsubishi #FM600TU-07A New Stock, FM600TU-07A Power Field-Effect Transistor 300A I(D) 75V 0.00073ohm 6-Element N-Channel Silicon metal-oxide Semiconductor FET MODULE-14; FM600TU-07A, #IGBT_Module, #IGBT, #FM600TU_07A

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Mitsubishi FM600TU-07A is a high-power insulated gate bipolar transistor (IGBT) module designed for use in various industrial applications. The module(FM600TU-07A) has maximum collector-emitter voltage 600 volts, maximum collector current 800 amperes, & maximum power dissipation 1900 watts. It built-in temperature sensor, allows for precise temperature monitoring & protection against overheating.

The FM600TU-07A module uses advanced IGBT technology, which offers high switching speed, low on-state voltage drop, and high current handling capability.

FM600TU-07A Specification:
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:75V
Gate-Emitter voltage VGES:±20V
Collector current Ic:300A
Collector current Icp:600A
Collector power dissipation Pc:960W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight Typical value 600g
Power Field-Effect Transistor 300A I(D) 75V 0.00073ohm 6-Element N-Channel Silicon metal-oxide Semiconductor FET MODULE-14

Sell CM100DU-12F-300G, #Mitsubishi #CM100DU-12F-300G New Stock, CM100DU-12F-300G Module Transistor N Channel 100 A 600 V 350 W 600 V Module;, #IGBT_Module, #IGBT, #CM100DU_12F_300G

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Mitsubishi CM100DU-12F-300G is a power module designed for use in high-power industrial applications. It consists two insulated gate bipolar transistor (IGBT) modules in a half-bridge configuration, each rated for 600V & 100A. The module includes integrated gate driver circuit and over-current and over-temperature protection.

CM100DU-12F-300G designed for high reliability & performance, for use in motor drives, inverters, & power supplies. Its compact size and high power density make it ideal for use in applications where space is limited.

CM100DU-12F-300G module is designed to be easy to use and integrate into existing systems, and its high switching frequency capability allows for efficient operation and reduced power losses.

CM100DU-12F-300G Features:
.Low Drive Power
.Low VCE(sat)
.Discrete Super-Fast Recovery Free-Wheel Diode
.Isolated Baseplate for Easy Heat Sinking
Applications:
.AC Motor Control
.UPS□ Battery Powered Supplies
 DualIGBTMOD™ Power Module.
DC Collector Current 100A
Collector Emitter Voltage Vces 600V
Power Dissipation Pd 350W
Collector Emitter Voltage V(br)ceo 600V
Transistor Case Style Module
No. of Pins 7
Operating Temperature Max 150°C
Operating Temperature Min -40 °C
SVHC To Be Advised
Module Transistor N Channel 100 A 600 V 350 W 600 V Module

Sell 2MBI200S-120, #Fuji #2MBI200S-120 New Stock, IGBT Module 1200V / 200A 2 in one-package, #IGBT_Module, #IGBT, #2MBI200S_120

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The 2MBI200S-120 is a Fuji power module that consists of two insulated gate bipolar transistor (IGBT) modules. The module is capable of handling maximum collector current 200 amps, maximum collector-emitter voltage 1200 volts. The maximum power dissipation 690 watts, it’s switch frequencies up to 20 kHz.

2MBI200S-120 is designed to operate in harsh environments with a wide operating temperature range of -40 to +150 degrees Celsius. It is suitable for use in industrial drives, power supplies, & renewable energy systems, where low power loss & high reliability are essential.

The 2MBI200S-120 Specifications:

High speed switching
Voltage drive
Low inductance module structure
Collector-Emitter voltage of 1200V
Gate-Emitter voltage of ±20V
Collector current of 300A
Collector power dissipation of 1500W
Isolation voltage of 2500V
Operating junction temperature of +150°C
Storage temperature of -40°C to +125°C
Mounting screw torque of 3.5 *2 N·m

Sell FP75R12KT4_B16, #Infineon #FP75R12KT4_B16 New Stock, FP75R12KT4_B16 1200 V 75 A PIM three phase input rectifier IGBT module;, #IGBT_Module, #IGBT, #FP75R12KT4_B16

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EconoPIM™ 3 1200 V, 75 A three phase PIM IGBT module with fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC. Also available with Thermal Interface Material. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. They are available in Econo 2 and Econo 3 housing and also available with Solder- or PressFIT pins.

Summary of Features
Low stray inductance module design
High reliability and power density
Copper base plate for optimized heat spread

Solderable pins
Low switching losses
High switching frequency
RoHS-compliant modules
Compact module concept
Optimized customer’s development cycle time and cost
Configuration flexibility

Applications
Motor control and drives
Residential aircon – motor-, system control and monitoring
Servo motor
1200 V 75 A PIM three phase input rectifier IGBT module

Sell FF300R12KT3, #Infineon #FF300R12KT3 New Stock, FF300R12KT3 Trans IGBT Module N-CH 1.2KV 300A 7-pin 62MM-1 ;, #IGBT_Module, #IGBT, #FF300R12KT3

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Features
IGBT3 and Emitter Controlled High Efficiency diode 1200V 300A
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 25°C, Tvj max = 175°C IC nom 300A
PeriodischerKollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 600 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 1450 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES ±20 V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op -40~150 °C
Lagertemperatur Storage temperature Tstg -40~125 °C
Gewicht Weight 340 g

Sell G121AGE-L03, #Chimei #G121AGE-L03 New Stock, a-Si TFT-LCD 12.1inch 800×600 450 nit 1500:1 (Typ.) 262K/16.7M color 60Hz; G121AGE-L03G121AGE-L03, #LCD_Display, #LCD, #G121AGE_L03

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Panel Brand : INNOLUX
Panel Model : G121AGE-L03
Panel Type : a-Si TFT-LCD , Panel
Panel Size : 12.1 inch
Resolution : 800(RGB)×600 , SVGA
Display Mode : Super MVA, Normally Black, Transmissive
Active Area : 246×184.5 mm
Outline : 260.5×204×8.4 mm
Surface : Antiglare, Hard coating (3H)
Brightness : 450 cd/m² (Typ.)
Contrast Ratio : 1500:1 (Typ.)
Display Colors : 262K/16.2M   (6-bit / 6-bit + FRC)
Response Time : 13/12 (Typ.)(Tr/Td)
Viewing Angle : 89/89/89/89 (Typ.)(CR≥10) (L/R/U/D)
Frequency : 60Hz
Lamp Type : WLED
Signal Interface : LVDS (1 ch, 6/8-bit)
Input Voltage : 3.3/5.0V (Typ.)(VCC)
G121AGE-L03 inverter, G121AGE-L03 power supply, G121AGE-L03 electronic board, G121AGE-L03 VGA board, G121AGE-L03 touchscreen available.

Sell SKM500GA124DH6, #Semikron #SKM500GA124DH6 New Stock, SEMIKRON IGBT Module 500A 1200V, #IGBT_Module, #IGBT, #SKM500GA124DH6

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Features
. MOS input (voltage controlled)
. N channel, homgeneous Si
. Low inductance case
. Very low tail current with low temperature dependence
. High short Circuit capability, self limiting to 6 * 1 cnom
. Latch-up free
. Fast & soft CAL diodes
. Isolated copper baseplate using DBC Direct Copper Bonding Technology
. Large clearance (12 mm ) and creepage distances (20 mm)
Typical Applications*
. AC inverter drives
. UPS
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:500A
Collector current Icp:1000A
Collector power dissipation Pc:380W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.5 to 3.5 N·m
Weight 330g

Sell MG15D6EM1, #Toshiba #MG15D6EM1 New Stock, Toshiba IGBT Module 15A/250V/GTR/6U; , #IGBT_Module, #IGBT, #MG15D6EM1

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MG15D6EM1 Description

MG15D6EM1, Three-Phase Bridge MOSFET Power Module – Viso:2.5kV; 15 Amp; 600 Volt

Target_Applications
MG15D6EM1 could be used in High Power Switching / Motor Control Applications
Drain-Source Voltage Vcss 250V
Gate-Source Voltage VGSS ±20V
Drain Current DC Ic 15A
Drain Current Peak Ic 30A
Drain Power Dissfpation( Tc=25°C ) Pc 100W
Channel Temperature Tch 150 °C
Isolation Voltage VIsol (AC 1 minute) :2500V
Screw Torque 30 Kg.cm

Sell 2MBI100N-060, #Fuji #2MBI100N-060 New Stock, Fuji IGBT Module (N series ) 2-Pack IGBT 600V 100A, #IGBT_Module, #IGBT, #2MBI100N_060

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Fuji 2MBI100N-060 is a high power insulated-gate bipolar transistor (IGBT) module designed for use in power electronics applications.

The 2MBI100N-060 module features voltage rating 600 volts & current rating 100 amps, suitable for use in high-power applications such as motor drives, power supplies, and welding equipment.

2MBI100N-060 has compact & rugged design that allows for easy installation and reliable operation in harsh environments.

Fuji 2MBI100N-060 IGBT module features built-in over-current protection and over-temperature protection, which help to ensure safe and stable operation.

2MBI100N-060 Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :100A
Collector current Icp 1ms Tc=80°C :200A
Collector power dissipation Pc:400W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Reverse Recovery Time trr IF=100A 300 ns
Diode Forward On-Voltage VF IF=100A VGE=0V 3.0 V