
1MBI600U4B-120
1MBI600U4B-120
1MBI600U4B-120
1MBI600U4B-120
1MBI600U4B-120
#1MBI600U4B-120 Fuji 1MBI600U4B-120 New 1MBI600U4B-120 Insulated Gate Bipolar Transistor 800A I(C) 1200V V(BR)CES N-Channel MODULE-4; 1MBI600U4B-120 , 1MBI600U4B-120 pictures, 1MBI600U4B-120 price, #1MBI600U4B-120 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Part Number: 1MBI600U4B-120
Part Life Cycle Code: End Of Life
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X4
Pin Count: 4
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.71
Case Connection: ISOLATED
Collector Current-Max (IC): 800 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
JESD-30 Code: R-XUFM-X4
Number of Elements: 1
Number of Terminals: 4
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 410 ns
Turn-on Time-Nom (ton): 320 ns
Insulated Gate Bipolar Transistor 800A I(C) 1200V V(BR)CES N-Channel MODULE-4
Part Life Cycle Code: End Of Life
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X4
Pin Count: 4
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.71
Case Connection: ISOLATED
Collector Current-Max (IC): 800 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
JESD-30 Code: R-XUFM-X4
Number of Elements: 1
Number of Terminals: 4
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 410 ns
Turn-on Time-Nom (ton): 320 ns
Insulated Gate Bipolar Transistor 800A I(C) 1200V V(BR)CES N-Channel MODULE-4