Silicon N-Channel power MOSFET module. High speed power switching, 50 A, 500 V.
PM50502C 0.65 lbs
PM50502C could be used in Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
. Equipped with Power MOS FET
. Low On-Resistance
. High Speed Switching
. Low Drive Current
. Wide Area of Safe Operation
. Inherent Parallel Diod between Source and Drain
.Isolated Base from Terminal
. Suitable for Motor Driver, Switching Regulator and etc.
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:500V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector current Icp:100A
Collector power dissipation Pc:300W
Collector-Emitter voltage VCES:2000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C