Infineon FZ900R12KE4HOSA1 New Stock

Infineon FZ900R12KE4HOSA1 New Stock
Infineon FZ900R12KE4HOSA1 New Stock
Infineon FZ900R12KE4HOSA1 New Stock
Infineon FZ900R12KE4HOSA1 New Stock
Infineon FZ900R12KE4HOSA1 New Stock
Infineon FZ900R12KE4HOSA1 New Stock
Infineon FZ900R12KE4HOSA1 New Stock
Infineon FZ900R12KE4HOSA1 New Stock

FZ900R12KE4HOSA1 Video

Sell FZ900R12KE4HOSA1, #Infineon #FZ900R12KE4HOSA1 New Stock, 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode 1200V 900V, #IGBT_Module, #IGBT, #FZ900R12KE4HOSA1


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Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
• Wind Turbines
Electrical Features
• Extended Operation Temperature Tvjop
• Low Switching Losses
• Unbeatable Robustness
• VCEsat with positive Temperature Coefficient
• Low VCEsat
Mechanical Features
• 4 kV AC 1min Insulation
• Package with CTI>400
• High Creepage and Clearance Distances
• High Power Density
Isolated Base Plate
• Standard Housing
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-emitter voltage Tvj = 25°C VCES 1200 V
DC collector current TC = 100°C, Tvj max = 175°C IC nom 900 A
peak collector current tP = 1 ms ICRM 1800 A
Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 4300 W
Gate-emitter peak voltage VGES:±20V
Temperature under switching conditions Tvj op -40~150°C
Mounting M6 screw torque 2.5~5.0 N·m
Weight 340g