Mitsubishi 2SC3319 New Stock
2022-08-22
#2SC3319 Mitsubishi 2SC3319 New 2SC3319 The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case. ; , 2SC3319 pictures, 2SC3319 price, #2SC3319 supplier
Email: [email protected]
Email: [email protected]
HIGH VOLTAGE POWER SWITCH
The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case.
It is particularly intended for high voitage,fast svitching and industrial applications
ABSOLUTE NAXIMUM RATINGS
Collector-emitter voltage 600V
Gate-emitter voltage 400V
Emitter-base voltage 8V
Collector Current 10A
Base current 4A
Total power dissipation at 125W
Storage temperature -65 to 200 ℃
Junction temperature 200 ℃
Type Designator: 2SC3319. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 100 W. Maximum Collector-Base Voltage
The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case.
The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case.
It is particularly intended for high voitage,fast svitching and industrial applications
ABSOLUTE NAXIMUM RATINGS
Collector-emitter voltage 600V
Gate-emitter voltage 400V
Emitter-base voltage 8V
Collector Current 10A
Base current 4A
Total power dissipation at 125W
Storage temperature -65 to 200 ℃
Junction temperature 200 ℃
Type Designator: 2SC3319. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 100 W. Maximum Collector-Base Voltage
The BUW25 is a silicom mulitepitaxial biplanal biplanar* NPN transistor in Jedec TO-3 metal case.