ADIADP2384/ADP2386 Step-Down DC-DC Controller Reference Solution

Analog Devices’ ADP2384/ADP2386 are two high-efficiency, synchronous step-down DC/DC regulators in a 4 mm × 4 mm LFCSP package that integrate a 44 mΩ high-side sense power MOSFET and a 11.6 mΩ (ADP2384), 11 mΩ (ADP2386) synchronous rectification MOSFET device. To achieve outstanding stability and transient response characteristics, the device uses a peak current mode, fixed frequency pulse width modulation control scheme. The switching frequency of the ADP2384/ADP2386 devices can be programmed from 200kHz to 1.4MHz. To reduce system noise, a synchronization function allows the switching frequency to be synchronized by an external clock. At the same time, it also has the functions of under-voltage shutdown, over-voltage protection, over-current protection, short-circuit protection, and thermal shutdown. This article introduces the device, characteristics, application direction and internal structure block diagram respectively through the characteristics of ADP2384 and ADP2386. The schematic diagram and PCB board diagram of input 12V, output 3.3V6A and output 3.3V4A under the condition of fixed frequency 600kHz are given through design examples.

The ADP2384 is a synchronous, step-down dc-to-dc regulator with an integrated 44 mΩ, high-side power MOSFET and an 11.6 mΩ, synchronous rectifier MOSFET to provide a high efficiency solution in a compact 4 mm × 4 mm LFCSP package . This device uses a peak current mode, constant frequency pulse- width modulation (PWM) control scheme for excellent stability and transient response. The switching frequency of the ADP2384 can be programmed from 200 kHz to 1.4 MHz. To minimize system noise, the synchronization function allows the switching frequency to be synchronized to an external clock.

The ADP2384 requires minimal external components and operates from an input voltage of 4.5 V to 20 V. The output voltage can be adjusted from 0.6 V to 90% of the input voltage and delivers up to 4 A of continuous current. Each IC draws less than 120 μA current from the input source when it is disabled.

The ADP2386 is a synchronous step-down, dc-to-dc regulator with an integrated 44 mΩ, high-side power MOSFET and an 11 mΩ, synchronous rectifier MOSFET to provide a high efficiency solution in a compact 4 mm × 4 mm LFCSP package . This device uses a peak current mode, constant frequency pulse-width modulation (PWM) control scheme for excellent stability and transient response. The switching frequency of the ADP2386 can be programmed from 200 kHz to 1.4 MHz. To minimize system noise, the synchronization function allows the switching frequency to be synchronized to an external clock.

The ADP2386 requires minimal external components and operates from an input voltage of 4.5 V to 20 V. The output voltage can be adjusted from 0.6 V to 90% of the input voltage and delivers up to 6 A of continuous current. Each IC draws less than 110 μA current from the input source when it is disabled.

This regulator targets high performance applications that require high efficiency and design flexibility. External compensation and an adjustable soft start function provide design flexibility. The power-good output and precision enable input provide simple and reliable power sequencing.

Other key features include undervoltage lockout (UVLO), overvoltage protection (OVP), overcurrent protection (OCP), short-circuit protection (SCP), and thermal shutdown (TSD).

ADP2384 main features:

Input voltage: 4.5V to 20V
Integrated MOSFETs: 44 mΩ/11.6 mΩ
Reference voltage: 0.6 V ± 1%
Continuous output current: 4A
Programmable switching frequency: 200 kHz to 1.4 MHz
Synchronizes to external clock: 200 kHz to 1.4 MHz
180° out-of-phase clock synchronization
Precision enable and power good
External compensation
Internal soft start with external adjustable option
Startup into a precharged output
Supported by ADIsimPower design tool

ADP2386 main features:

Input voltage: 4.5V to 20V
Integrated MOSFETs: 44 mΩ/11 mΩ
Reference voltage: 0.6 V ± 1%
Continuous output current: 6A
Programmable switching frequency: 200 kHz to 1.4 MHz
Synchronizes to external clock: 200 kHz to 1.4 MHz
180°out of phase clock synchronization
Precision enable and power good
External compensation
Internal soft start with external adjustable option
Startup into a precharged output
Supported by ADIsimPower design tool

ADP2384/ADP2386 Applications:

communications infrastructure
Networking and servers
Industrial and instrumentation
Healthcare and medical
Intermediate power rail conversion
DC-to-dc point-of-load applications


Figure 1. ADP2384 Block Diagram

Figure 2. ADP2386 Block Diagram

The main features of the ADP2384/ADP2386 design scheme:

Input voltage: 4.5V to 20V
±1% output voltage accuracy
Integrated MOSFETs
44mΩ/11mΩ
Continuous output current
4 A for ADP2384
6A for ADP2386
Programmable switching frequency: 200 kHz to 1.4 MHz
Synchronizes to external clock: 200 kHz to 1.4 MHz
180° out-of-phase synchronization
Precision enable and power good
External compensation
Internal soft start with external adjustable option
Startup into precharged output

ADP2384 circuit diagram:

Figure 3. ADP2384 Circuit Diagram

ADP2386 circuit diagram:

Figure 4. ADP2386 Circuit Diagram

ADP2384 Bill of Materials:

ADP2386 Bill of Materials:

PCB component layout:

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Time to start producing GaN-based RF devices

5G has brought a whole new change in RF technology. Recently, Qorvo recently released the QPA2309 c-band power amplifier (PA) designed for defense and aerospace applications, which can provide high power density and added power efficiency for 5C 6 GHz RF design. . It uses Qorvo’s self-developed QGaN25HV wafer process, namely GaN-on-SiC.

Translated from – EEtimes

5G has brought a whole new change in RF technology. Recently, Qorvo recently released the QPA2309 c-band power amplifier (PA) designed for defense and aerospace applications, which can provide high power density and added power efficiency for 5C 6 GHz RF design. . It uses Qorvo’s self-developed QGaN25HV wafer process, namely GaN-on-SiC.

Over the past year or so, many technologies are penetrating the consumer space. Qorvo’s new high-power amplifier MMIC is designed for “commercial and military radar, as well as Electronic warfare applications.”

Not so long ago GaN’s power applications were limited to a niche market. Even in many industrial applications, such as automotive or solar cell inverters, SiC is more common. And GaN has a long history in optoelectronics, enabling the production of blue laser diodes and LEDs.

But now, GaN is starting to explode in the power market. Apple’s decision to launch the last iPhone without a charging unit will drive the shift. Since it’s no longer standard with Apple, consumers may now be tempted by multiple charging power sources at once, something Apple never included in its phones or tablets. The unique advantages of GaN in power electronics are numerous and will not be repeated here.

Let’s go back to RF applications.

Current technology trends require increased RF capabilities and drive components, which is certainly a challenge.

We are on the cusp of rapid deployment of 5G systems. This means one more system and another radio in connected mobile devices and countless fixed and mobile IoT devices.

The frequency bands required for new radio systems today’s 5G and systems still being defined need to create an ideal environment for a rapid transition to GaN RF devices. As a wide-bandgap semiconductor, the advantages of GaN over conventional materials will provide a strong impetus for this particular requirement.

The graphs above strongly illustrate the cutting-edge performance of GaN. Qorvo’s amplifiers are designed to operate in the 5GHz to 6GHz frequency band, so this product is a leader in “a handful of competing technologies.” However, when it comes to power, GaN has no match. The 100W power specification makes Qorvo’s PAs available only with GaN materials.

Yole development details the breakthrough potential of GaN. In an article “RF GaN: The Stranglehold of 5G?”, the market for GaN is predicted:

GaN RF equipment market to exceed $2 billion by 2025
Annual growth rate of 20%
Rapidly increasing military use
The performance benefits of GaN will drive the adoption of 5G infrastructure.

Analyst Dr. Ezgi Dogmus predicts that 5G infrastructure will drive the “GaN dominance”. “The military and 5G infrastructure are expected to be the bulk of the growth. Strictly speaking, 5G construction is an industrial application, not a consumer application, but the technology remains at the heart of addressing consumer mobile bandwidth needs.

The GaN RF equipment market is on the verge of rapid growth, especially in the defense sector.

The choice of GaN for the Qorvo QPA2309 was the right choice, and it is packaged in a 7x7mm QFN configuration with internal matching that requires no external components. For QFN, it’s a four-axis, planar leadless kit that is quietly expanding its reach. Because it offers a good compromise between low cost and reduced board space requirements for pin counts. And, this prime-purpose kit — from power management to audio amplifiers to microcontrollers — is continuing to increase its high-power and high-frequency applications.

New Qorvo power amplifiers draw attention to emerging technologies and expanding mature package designs. From the mundane to the bizarre, they’re all worth seeing up close, and they’re expected to emerge in 2021.

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