Samsung unveils new 108-megapixel image sensor

Samsung launches new 108-megapixel image sensor ISOCELL HM3

The ISOCELL HM3 sensor size is 1/1.33 inches, the pixel size is 0.8um, and the number of pixels is 108 million. For faster autofocus, the HM3 integrates an improved Super PD Plus function. The Super PD Plus adds an autofocus-optimized microlens to the phase-detection focusing function, resulting in a 50% improvement in the device’s measurement accuracy. The enhanced Phase Detection Auto Focus (PDAF) solution will be more advantageous when capturing dynamic images, and will improve photographic results in low-light scenes.

The HM3 also supports Smart ISO Pro, a high dynamic range imaging technology that captures both high and low ISO photos simultaneously, without requiring multiple exposures to create standard HDR images, thus significantly reducing motion artifacts. In low noise mode, the light sensitivity can be increased by 50%, and the photo effect in low light environment is brighter and clearer.

In mixed light environments, such as at the end of a tunnel, the HM3 features Smart ISO Pro, a high dynamic range (HDR) imaging technology that uses an in-scene double conversion gain (iDCG) solution. Smart ISO Pro can capture both high ISO and low ISO frames, then combine them into a single image with 12-bit color depth and reduced noise. Since Smart ISO Pro does not require multiple exposures to create standard HDR images, motion artifacts are significantly reduced. Additionally, in low-noise mode, it can increase light sensitivity by 50% to capture brighter, clearer results than before in low-light environments.

HM3 can also realize pixel synthesis. By combining adjacent 9 pixels, HM3 can simulate a 12-megapixel image sensor with 2.4um large pixels. The synthetic behavior is implemented using hardware IP and can be switched seamlessly when applied. In terms of power consumption, in preview mode, the HM3 is 6.5% lower than the previous generation, and the sensor is now in mass production.

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weekly core

NXP launches 3-band Wi-Fi 6E products

The CW641 launched by NXP is a tri-band wireless network SoC chip that supports 6GHz carrier. Can be used as a wireless access point or gateway.

The chip supports 160MHz bandwidth, the physical layer speed reaches 4.8Gbps, and the actual operating speed exceeds 4Gbps.

The 6GHz spectrum is complementary to the 2.4 and 5GHz spectrum standardized by the previous generation of Wi-Fi, the Wi-Fi 6 standard is to expand the bandwidth on the 2.4GHz and 5GHz carriers, and the Wi-Fi6E is extended on the 6GHz carrier. 2GHz bandwidth.

The introduction of the Wi-Fi6E standard has opened up the development prospects of home mesh (mesh) communication and high-resolution video multi-channel streaming. This NXP CW641 is also suitable for consumer electronics, automotive, industrial and IoT applications.

main feature

4×4 Wi-Fi device supporting 4 spatial streams

Support 6GHz, 5GHz and 2.4GHz three frequency bands

Band bandwidth is 160/80/40/20MHz

Physical layer peak speed of 4.8Gbps

Uplink and downlink support Orthogonal Frequency Division Multiple Access (OFDMA)

Uplink and downlink support Multi-User Multiple Input Multiple Output (MU-MIMO)

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weekly core

STMicroelectronics Releases 650V Asymmetric Topology Gallium Nitride Power Product MasterGaN2

This week, STMicroelectronics introduced MasterGaN2, the first in a new family of dual asymmetric gallium nitride (GaN) transistors, containing two asymmetric GaN for soft-switching and active-clamp flyback topologies in a single package transistor.

The on-resistances of the two 650V normally-off GaN transistors are 150mΩ and 225mΩ respectively, and each transistor integrates an optimized gate driver, making GaN transistors as convenient and easy to use as ordinary silicon devices. Due to the integrated driving function and the inherent performance advantages of GaN, MasterGaN2 can effectively improve the energy efficiency of topology circuits such as active clamp flyback converters, and show advantages in reducing size and weight.

The MasterGaN family integrates two GaN transistors and corresponding high-voltage gate drivers in the same package, with comprehensive protection built in. Developers can directly connect devices such as sensors and processors to MasterGaN, and the input is compatible with 3.3V-15V logic signals, which is very suitable for fast charging applications such as USB-PD high-power power adapters. According to STMicroelectronics, MasterGaN enables chargers to be 80 percent smaller, 70 percent lighter, and charge twice as fast compared to common silicon-based solutions. The solution has built-in protection functions such as high- and low-side under-voltage lockout (UVLO), gate driver interlock, dedicated shutdown pin, and thermal protection. The package is GQFN, the volume is 9mm x 9mm x 1mm, and the creepage between the high and low voltage pads The distance is more than 2mm.

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weekly core

Renesas Electronics Announces Industry’s First Quad-Channel Transmitter Variable Gain Amplifier

This week, Renesas Electronics Group announced the launch of four RF products. These four products are: the industry’s first four-channel F4482/1 TX Variable Gain Amplifier (VGA), and the F011x Series Dual-Channel First-Class Low Noise Amplifier (LNA) , the industry’s first high-power pre-driver F1471 RF driver amplifier with P1dB exceeding 1/2W, and the F2934 RF switch with a smaller package, higher isolation, and a DPD feedback path.

Among them, the highly integrated F4482/1 four-channel TX VGA features are as follows:

RF frequency range from 400MHz to 2800MHz

Balun, low-pass filter, amplifier and digital step attenuator integrated on a single chip

Renesas Zero DistortionTM technology improves service quality and increases dynamic range; Glitch-FreeTM technology protects PA components and simplifies DPD design

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weekly core

TDK Introduces New Thin, High-Accuracy Medical Sensors for Mobile Ventilators

TDK announces the B58621V series of high-precision barometric pressure sensors, which are sold in assembled PCB modules. There are three products in total for full-scale 16 mbar, 100 mbar and 7 bar applications, at -20°C to +70° At a temperature of C, the absolute accuracy is ±1% FS.

Measuring 24 mm x 26 mm, the series has access to pressure ports and inlets, and has two plug connectors for daisy-chaining systems. The integrated SPI interface facilitates device access to various digital applications. This range of products is certified to EN ISO 13485 for use in medical devices. Accurate pressure loss measurements in streamlines can be used in ventilator equipment to accurately calculate flow and, thanks to its extremely small size (only 6mm in height), are particularly suitable for mobile ventilators, but also for monitoring filters and gases mixture.

Key Features and Benefits

Low height (height 6 mm)

Measuring range from 16 mbar to 7 bar

Accuracy up to ±1% FS

Certified to EN ISO 13485

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weekly core

BroadWave Introduces Zero-Offset Schottky RF Detectors Covering 100 MHz to 18.5 GHz

BroadWave Technologies has introduced a zero-bias Schottky RF detector designed to convert an RF input signal to a DC output signal. The 851-090-POS is a 50 ohm positive polarity RF detector operating from 100 MHz to 18.5 GHz. Input power is up to 200 mW, VSWR is up to 1.30:1, and flatness is up to ±0.5 dB.

The RF input connector is SMA male, while the DC output connector is SMA female. Low-level sensitivity is 0.5 mV/µW, and the operating temperature range is -55°C to +100°C. BroadWave manufactures negative and positive polarity RF detectors. Other connector types and 75 Ohm RF detectors are also available.

The Links:   NL6448BC20-30D SKKT 132/16 THE IC INFO