MG200Q2YS40 is a perfect transistor module to upgrade the performance of high speed switching motor drives. At only 0.95 lbs., this device can produce a collector emitter voltage of 1200 and a collector current of 200 amperes.
MG200Q2YS40 has outstanding features that give itself the title of one of the most amazing transistor modules today. Its electrodes are isolated from its base, confirming that it’s an advanced type of module. Moreover, it has three terminal power semiconductor devices.
To prevent delayed switching responses, MG200Q2YS40 is designed with an extremely low reverse recovery time. It has a complete half bridge in one package to modify its performance rating. It also has a robust module construction to ensure its high durability. Even when used on full power for the entire day, rest assured that it’s not damaged at all.
Flexibility wise, it can also work best on other applications like robots, servo controls, electric choppers and many more!
MG200Q2YS40 0.95 lbs Target_Applications MG200Q2YS40 could be used in HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS Features IBGT MODULE, SILICON N CHANNEL IGBT