TOSHIBA MG50G6ES50 New Stock

TOSHIBA  MG50G6ES50 New Stock
#MG50G6ES50 TOSHIBA MG50G6ES50 New MG50G6ES50 Toshiba IGBT-module 1200V/100A/280W; , MG50G6ES50 pictures, MG50G6ES50 price, #MG50G6ES50 supplier


MG50G6ES50 Features 
· Low VCE(sat) 
· Compact package 
· P.C. board mount 
· Converter diode bridge, Dynamic brake circuit
· Inverter for motor drive
· AC and DC servo drive amplifier 
· Uninterruptible power supply
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector current Icp:100A
Collector power dissipation Pc:280W
Collector-Emitter voltage VCES:1200V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2/3 *1 N·m
Toshiba IGBT-module 1200V/100A/280W